SILICON BIPOLAR MICROWAVE-POWER TRANSISTORS

被引：7

作者：

ALLISON, R

机构：

[1] TRW Semiconductors, Lawndale

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1979年 / 27卷 / 05期

关键词：

D O I：

10.1109/TMTT.1979.1129642

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a review of the present status of com-mercially available silicon bipolar transistors and projects what power at frequency performance will be available in the next few years. It discusses the need for implementing certain fabrication/processing developments necessary to meet the projected power at frequency performance levels. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：415 / 422

页数：8

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