RAMAN-SCATTERING STUDY OF ION-IMPLANTED AND CW-LASER ANNEALED POLYCRYSTALLINE SILICON

被引：30

作者：

NAKASHIMA, S ^{[1
]}

OIMA, S ^{[1
]}

MITSUISHI, A ^{[1
]}

NISHIMURA, T ^{[1
]}

FUKUMOTO, T ^{[1
]}

AKASAKA, Y ^{[1
]}

机构：

[1] MITSUBISHI ELECT CORP,LSI RES & DEV LAB,ITAMI,HYOGO 664,JAPAN

来源：

关键词：

D O I：

10.1016/0038-1098(81)90825-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：765 / 768

页数：4

共 8 条

[1] EFFECT OF STATIC UNIAXIAL STRESS ON RAMAN SPECTRUM OF SILICON
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PINCZUK, A
BURSTEIN, E
POLLAK, FH
CARDONA, M
[J]. SOLID STATE COMMUNICATIONS, 1970, 8 (02) : 133 - +
[2] Baumgart H., 1980, Journal of the Physical Society of Japan, V49, P1291
[3] RAMAN-SCATTERING FROM BORON-IMPLANTED LASER-ANNEALED SILICON
ENGSTROM, H
BATES, JB
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) : 2921 - 2925
[4] POLYCRYSTALLINE SILICON FILMS DEPOSITED IN A GLOW-DISCHARGE AT TEMPERATURES BELOW 250-DEGREES-C
IQBAL, Z
WEBB, AP
VEPREK, S
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (02) : 163 - 165
[5] KANELLIS G, 1980, PHYS REV B, V21, P1534
[6] RAMAN STUDY OF LASER ANNEALED SILICON
MORHANGE, JF
KANELLIS, G
BALKANSKI, M
[J]. SOLID STATE COMMUNICATIONS, 1979, 31 (11) : 805 - 808
[7] MORHANGE JF, 1978, P LASER SOLID INTERA, P429
[8] NISHIMURA T, UNPUBLISHED