OPTICALLY INDUCED EXCESS HOLE POPULATION IN SEMI-INSULATING GAAS

被引：7

作者：

JIMENEZ, J ^{[1
]}

ALVAREZ, A ^{[1
]}

BONNAFE, J ^{[1
]}

机构：

[1] UNIV MONTPELLIER 2,CTR ELECTR MONTPELLIER,F-34060 MONTPELLIER,FRANCE

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.42.11762

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The existence of a persistent hole population in semi-insulating GaAs is studied in relation to both the photoquenching and enhanced photocurrent effects, which are achieved by persistent illumination with 1-1.35-eV light at low temperature. The observation of this hole population is related to the metastability of the EL2 level for the photoquenching, and to another state tentatively related to the EL6 level for the enhanced photocurrent. The role of the acceptors is discussed for both effects, being the enhanced photocurrent associated with the thermal emission of the holes from the acceptors arising from the metastability. The persistent photocurrent observed in liquid-encapsulated Czochralski grown specimens is also discussed in terms of thermal emission from these acceptors.

引用

页码：11762 / 11767

页数：6

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