OPTICAL QUENCHING OF THE EXTRINSIC LIGHT-INDUCED ENHANCED PHOTOCURRENT IN SEMI-INSULATING GAAS

被引：9

作者：

JIMENEZ, J

ALVAREZ, A

GONZALEZ, MA

BONNAFE, J

DESAJA, JA

机构：

[1] ETSII,E-47011 VALLADOLID,SPAIN

[2] UNIV MONTPELLIER 2,CTR ELECTR MONTPELLIER,F-34060 MONTPELLIER,FRANCE

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 10期

关键词：

D O I：

10.1143/JJAP.27.1841

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1841 / 1844

页数：4

共 18 条

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DESAJA, JA .

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[6] OPTICALLY ENHANCED DEFECT REACTIONS IN SEMI-INSULATING BULK GAAS [J].

JIMENEZ, J ;

GONZALEZ, MA ;

HERNANDEZ, P ;

DESAJA, JA ;

BONNAFE, J .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) :1152-1160

[7] OPTICALLY INDUCED LONG-LIFETIME PHOTOCONDUCTIVITY IN SEMIINSULATING BULK GAAS [J].

JIMENEZ, J ;

HERNANDEZ, P ;

DESAJA, JA ;

BONNAFE, J .

PHYSICAL REVIEW B, 1987, 35 (08) :3832-3842

[8] IDENTIFICATION OF THE 0.82-EV ELECTRON TRAP, EL2 IN GAAS, AS AN ISOLATED ANTISITE ARSENIC DEFECT [J].

KAMINSKA, M ;

SKOWRONSKI, M ;

KUSZKO, W .

PHYSICAL REVIEW LETTERS, 1985, 55 (20) :2204-2207

[9]

LEVINSON M, 1987, IN PRESS I C SER

[10] OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS [J].

MARTIN, GM .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :747-748

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