INSIGHTS INTO METASTABLE DEFECTS IN SEMIINSULATING GAAS FROM ELECTRONIC RAMAN STUDIES OF NONEQUILIBRIUM HOLES

[1] BACHELET GB, 1985, 17TH P INT C PHYS SE, P755

[2] PHOTORESPONSE OF THE ASGA ANTISITE DEFECT IN AS-GROWN GAAS [J]. APPLIED PHYSICS LETTERS, 1985, 46 (08) : 781 - 783

[3] BISTABILITY AND METASTABILITY OF THE GALLIUM VACANCY IN GAAS - THE ACTUATOR OF EL2 [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (21) : 2340 - 2343

[4] DEIRI M, 1984, J PHYS C SOLID STATE, V17, pL627, DOI 10.1088/0022-3719/17/23/007

[5] IDENTIFICATION OF ASGA ANTISITE DEFECTS IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 907 - 909

[6] OPTICALLY ENHANCED DEFECT REACTIONS IN SEMI-INSULATING BULK GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) : 1152 - 1160

[7] LONG LIFETIME PHOTOCONDUCTIVITY IN SEMI-INSULATING BULK GAAS [J]. SOLID STATE COMMUNICATIONS, 1985, 55 (05) : 459 - 462

[8] IDENTIFICATION OF THE 0.82-EV ELECTRON TRAP, EL2 IN GAAS, AS AN ISOLATED ANTISITE ARSENIC DEFECT [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (20) : 2204 - 2207

[9] INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS [J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 302 - 304

[10] OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 747 - 748

[1] BACHELET GB, 1985, 17TH P INT C PHYS SE, P755

[2] PHOTORESPONSE OF THE ASGA ANTISITE DEFECT IN AS-GROWN GAAS [J]. APPLIED PHYSICS LETTERS, 1985, 46 (08) : 781 - 783

[3] BISTABILITY AND METASTABILITY OF THE GALLIUM VACANCY IN GAAS - THE ACTUATOR OF EL2 [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (21) : 2340 - 2343

[4] DEIRI M, 1984, J PHYS C SOLID STATE, V17, pL627, DOI 10.1088/0022-3719/17/23/007

[5] IDENTIFICATION OF ASGA ANTISITE DEFECTS IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 907 - 909

[6] OPTICALLY ENHANCED DEFECT REACTIONS IN SEMI-INSULATING BULK GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) : 1152 - 1160

[7] LONG LIFETIME PHOTOCONDUCTIVITY IN SEMI-INSULATING BULK GAAS [J]. SOLID STATE COMMUNICATIONS, 1985, 55 (05) : 459 - 462

[8] IDENTIFICATION OF THE 0.82-EV ELECTRON TRAP, EL2 IN GAAS, AS AN ISOLATED ANTISITE ARSENIC DEFECT [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (20) : 2204 - 2207

[9] INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS [J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 302 - 304

[10] OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 747 - 748