LONG LIFETIME PHOTOCONDUCTIVITY IN SEMI-INSULATING BULK GAAS

被引：21

作者：

JIMENEZ, J ^{[1
]}

HERNANDEZ, P ^{[1
]}

DESAJA, JA ^{[1
]}

BONNAFE, J ^{[1
]}

机构：

[1] UNIV MONTPELLIER 2,CTR ELECTR MONTPELLIER,F-34060 MONTPELLIER,FRANCE

来源：

SOLID STATE COMMUNICATIONS | 1985年 / 55卷 / 05期

关键词：

D O I：

10.1016/0038-1098(85)90850-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：459 / 462

页数：4

共 27 条

[1] OPTICAL PHOTOGENERATED TRAPS IN SEMI-INSULATING GAAS BULK MATERIAL
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CASTAGNE, M
[J]. PHYSICA SCRIPTA, 1984, 30 (03): : 198 - 200
[2] CRAWFORD MG, 1968, PHYS REV, V168, P867
[3] DIRECT EVIDENCE FOR A CHARGE-CONTROLLED DIPOLAR STRUCTURE OF THE EL2 COMPLEX CENTER IN SEMI-INSULATING GAAS
FILLARD, JP
BONNAFE, J
CASTAGNE, M
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) : 3020 - 3021
[4] STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS
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CHEN, RT
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[J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 46 - 48
[5] NON-G DONOR LEVELS AND KINETICS OF ELECTRON-TRANSFER IN N-TYPE CDTE
ISELER, GW
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[J]. SOLID STATE COMMUNICATIONS, 1972, 10 (07) : 619 - +
[6] OPTICALLY ENHANCED DEFECT REACTIONS IN SEMI-INSULATING BULK GAAS
JIMENEZ, J
GONZALEZ, MA
HERNANDEZ, P
DESAJA, JA
BONNAFE, J
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) : 1152 - 1160
[7] A STUDY ON THE PHOTOCONDUCTIVITY OF A SET OF HORIZONTAL BRIDGMAN SEMI-INSULATING GAAS INGOTS
JIMENEZ, J
GONZALEZ, MA
DESAJA, JA
BONNAFE, J
[J]. JOURNAL OF MATERIALS SCIENCE, 1984, 19 (04) : 1207 - 1219
[8] THERMAL QUENCHING OF THE 1-1.35EV EXTRINSIC PHOTOCONDUCTIVITY IN SEMI-INSULATING GAAS (CR,O)
JIMENEZ, J
GONZALEZ, MA
SANTACRUZ, LFS
[J]. SOLID STATE COMMUNICATIONS, 1984, 49 (09) : 917 - 920
[9] JIMENEZ J, UNPUB J APPL PHYS
[10] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS
LAGOWSKI, J
GATOS, HC
PARSEY, JM
WADA, K
KAMINSKA, M
WALUKIEWICZ, W
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 342 - 344

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