THE ANOMALOUS AVALANCHE BREAKDOWN

被引:7
作者
ALBRECHT, H [1 ]
MULLER, R [1 ]
机构
[1] TECH UNIV MUNICH, LEHRSTUHL TECH ELEKTR, D-8000 MUNICH 2, FED REP GER
关键词
D O I
10.1109/T-ED.1980.19966
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:970 / 977
页数:8
相关论文
共 26 条
[1]   DISTINCTION BETWEEN AVALANCHE AND TUNNELING BREAKDOWN IN ONE-SIDED ABRUPT JUNCTIONS [J].
ALBRECHT, H ;
LERACH, L .
APPLIED PHYSICS, 1978, 16 (02) :191-194
[2]  
Albrecht H., 1978, Archiv fur Elektronik und Uebertragungstechnik, V32, P239
[3]  
ALBRECHT VH, 1978, AEU-INT J ELECTRON C, V32, P222
[4]   IMPACT IONIZATION IN HEAVILY DOPED N-INAS AND N-INSB [J].
BAUER, G ;
KUCHAR, F .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 13 (01) :169-+
[5]   IMPACT IONIZATION BY ELECTRIC-FIELDS IN INTRINSIC INSB [J].
BRUHNS, H ;
HUBNER, K .
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1977, 26 (03) :227-232
[6]   CARRIER TRANSPORT ACROSS METAL-SEMICONDUCTOR BARRIERS [J].
CHANG, CY ;
SZE, SM .
SOLID-STATE ELECTRONICS, 1970, 13 (06) :727-+
[7]   IONIZATION RATES FOR ELECTRONS AND HOLES IN SILICON [J].
CHYNOWETH, AG .
PHYSICAL REVIEW, 1958, 109 (05) :1537-1540
[8]  
Dornhaus R., 1976, Solid-State physics, P1
[9]   AVALANCHE MULTIPLICATION IN GASB PN-JUNCTIONS [J].
HAECKER, W .
SOLID-STATE ELECTRONICS, 1974, 17 (09) :993-994
[10]   A METHOD FOR HEAT FLOW RESISTANCE MEASUREMENTS IN AVALANCHE DIODES [J].
HAITZ, RH ;
STOVER, HL ;
TOLAR, NJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (05) :438-&