MEDIUM RANGE ORDER IN AMORPHOUS-SILICON AND GERMANIUM

被引：17

作者：

TSU, R ^{[1
]}

机构：

[1] MICROELECTR CTR N CAROLINA, RES TRIANGLE PK, NC 27709 USA

来源：

关键词：

D O I：

10.1016/0022-3093(87)90038-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：163 / 166

页数：4

共 17 条

[1] STRUCTURAL INFORMATION FROM THE RAMAN-SPECTRUM OF AMORPHOUS-SILICON
BEEMAN, D
TSU, R
THORPE, MF
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[2] STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS
CERDEIRA, F
BUCHENAUER, CJ
CARDONA, M
POLLAK, FH
[J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 580 - +
[3] HEAT OF CRYSTALLIZATION AND MELTING-POINT OF AMORPHOUS-SILICON
DONOVAN, EP
SPAEPEN, F
TURNBULL, D
POATE, JM
JACOBSON, DC
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 698 - 700
[4] HERNANDEZ JG, 1983, APPL PHYS LETT, V42, P90
[5] KSHIRSAGAR ST, 1981, J PHYS PARIS S, V12, P54
[6] Lannin J. S., 1987, Disordered semiconductors, P283
[7] INFLUENCE OF MICROSTRUCTURE ON THE PHOTOCONDUCTIVITY OF GLOW-DISCHARGE DEPOSITED AMORPHOUS SIC-H AND AMORPHOUS SIGE-H ALLOYS
MAHAN, AH
RABOISSON, P
TSU, R
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (06) : 335 - 337
[8] ORDERING OF AMORPHOUS-GERMANIUM PRIOR TO CRYSTALLIZATION
PAESLER, MA
SAYERS, DE
TSU, R
GONZALEZHERNANDEZ, J
[J]. PHYSICAL REVIEW B, 1983, 28 (08): : 4550 - 4557
[9] EFFECTS OF QUANTITATIVE DISORDER ON THE ELECTRONIC-STRUCTURES OF SI AND GE
TANAKA, K
TSU, R
[J]. PHYSICAL REVIEW B, 1981, 24 (04): : 2038 - 2050
[10] THEORY OF QUANTUM WELL STRUCTURES OF AMORPHOUS MATERIALS
TSU, R
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 75 (1-3) : 463 - 468