EFFECTS OF QUANTITATIVE DISORDER ON THE ELECTRONIC-STRUCTURES OF SI AND GE

被引：46

作者：

TANAKA, K

TSU, R

机构：

来源：

PHYSICAL REVIEW B | 1981年 / 24卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.24.2038

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2038 / 2050

页数：13

共 44 条

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