EFFECTS OF QUANTITATIVE DISORDER ON THE ELECTRONIC-STRUCTURES OF SI AND GE

被引:46
作者
TANAKA, K
TSU, R
机构
来源
PHYSICAL REVIEW B | 1981年 / 24卷 / 04期
关键词
D O I
10.1103/PhysRevB.24.2038
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
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页码:2038 / 2050
页数:13
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