INFLUENCE OF DISORDER ON THE ELECTRONIC-STRUCTURE OF AMORPHOUS-SILICON

被引：103

作者：

SINGH, J

机构：

[1] UNIV CHICAGO,JAMES FRANCK INST,CHICAGO,IL 60637

[2] UNIV CHICAGO,DEPT PHYS,CHICAGO,IL 60637

来源：

PHYSICAL REVIEW B | 1981年 / 23卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.23.4156

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4156 / 4168

页数：13

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