STRAIN RELAXATION PHENOMENA IN GEXSI1-X/SI STRAINED STRUCTURES

[1] FORBIDDEN-REFLECTION LATTICE IMAGING FOR THE DETERMINATION OF KINK DENSITIES ON PARTIAL DISLOCATIONS [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1986, 53 (05): : 627 - 643

[2] ALEXANDER H, 1968, SOLID STATE PHYSICS, V22

[3] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440

[4] BEAN JC, 1985, MATER RES SOC S P, V37, P245

[5] STRESS DEPENDENCE OF DISLOCATION GLIDE ACTIVATION-ENERGY IN SINGLE-CRYSTAL SILICON-GERMANIUM ALLOYS UP TO 2.6 GPA [J]. PHYSICAL REVIEW B, 1988, 38 (17): : 12383 - 12387

[6] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1325 - 1327

[7] CORRECTION [J]. APPLIED PHYSICS LETTERS, 1988, 52 (10) : 852 - 852

[8] DISLOCATION NUCLEATION NEAR THE CRITICAL THICKNESS IN GESI/SI STRAINED LAYERS [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1989, 59 (05): : 1059 - 1073

[9] THERMAL RELAXATION OF METASTABLE STRAINED-LAYER GEXSI1-X/SI EPITAXY [J]. PHYSICAL REVIEW B, 1985, 31 (06): : 4063 - 4065

[10] ONE-DIMENSIONAL DISLOCATIONS .2. MISFITTING MONOLAYERS AND ORIENTED OVERGROWTH [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053): : 216 - 225

[1] FORBIDDEN-REFLECTION LATTICE IMAGING FOR THE DETERMINATION OF KINK DENSITIES ON PARTIAL DISLOCATIONS [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1986, 53 (05): : 627 - 643

[2] ALEXANDER H, 1968, SOLID STATE PHYSICS, V22

[3] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440

[4] BEAN JC, 1985, MATER RES SOC S P, V37, P245

[5] STRESS DEPENDENCE OF DISLOCATION GLIDE ACTIVATION-ENERGY IN SINGLE-CRYSTAL SILICON-GERMANIUM ALLOYS UP TO 2.6 GPA [J]. PHYSICAL REVIEW B, 1988, 38 (17): : 12383 - 12387

[6] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1325 - 1327

[7] CORRECTION [J]. APPLIED PHYSICS LETTERS, 1988, 52 (10) : 852 - 852

[8] DISLOCATION NUCLEATION NEAR THE CRITICAL THICKNESS IN GESI/SI STRAINED LAYERS [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1989, 59 (05): : 1059 - 1073

[9] THERMAL RELAXATION OF METASTABLE STRAINED-LAYER GEXSI1-X/SI EPITAXY [J]. PHYSICAL REVIEW B, 1985, 31 (06): : 4063 - 4065

[10] ONE-DIMENSIONAL DISLOCATIONS .2. MISFITTING MONOLAYERS AND ORIENTED OVERGROWTH [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053): : 216 - 225