FAST ALGORITHM FOR CALCULATION OF JUNCTION CAPACITANCE AND ITS APPLICATION FOR IMPURITY PROFILE DETERMINATION

被引：8

作者：

DEMAN, HJJ

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(72)90051-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：177 / &

共 14 条

[1] CHAWLA BR, 1971, IEEE T ELECTRON DEVI, VED18, P178
[2] DEMAN HJJ, 1970, IEEE T ELECTRON DEVI, VED17, P1087
[3] A RAPIDLY CONVERGENT DESCENT METHOD FOR MINIMIZATION
FLETCHER, R
POWELL, MJD
[J]. COMPUTER JOURNAL, 1963, 6 (02) : 163 - &
[4] GUMMEL HK, 1964, IEEE T, VED11, P455
[5] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON
IRVIN, JC
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +
[6] LAWRENCE H, 1960, BELL SYST TECH J, V38, P389
[7] NUMERICAL CALCULATIONS OF CAPACITANCE OF LINEARLY GRADED SI P-N JUNCTIONS
NUYTS, W
VANOVERS.RJ
[J]. ELECTRONICS LETTERS, 1969, 5 (03) : 54 - &
[8] NUYTS W, THESIS U LOUVAIN
[9] DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON
TANNENBAUM, E
[J]. SOLID-STATE ELECTRONICS, 1961, 2 (2-3) : 123 - 132
[10] DETERMINATION OF A PHYSICAL MODEL FOR DOUBLE DIFFUSED TRANSISTORS
THOMAS, RE
BOOTHROYD, AR
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (03) : 365 - +