DETERMINATION OF A PHYSICAL MODEL FOR DOUBLE DIFFUSED TRANSISTORS

[1] BOOTHROYD AR, 1961, 60 U CAL REP

[2] BOOTHROYD AR, 1963, IEEE T ELECTRON DEV, V10, P140

[3] DAS MB, 1961, IRE T ELECTRON DEV, VED8, P15

[4] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553

[5] POTENTIAL DISTRIBUTION AND CAPACITANCE OF A GRADED P-N JUNCTION [J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (06): : 1573 - 1602

[6] DRIFT MOBILITIES IN SEMICONDUCTORS .2. SILICON [J]. PHYSICAL REVIEW, 1954, 93 (06): : 1204 - 1206

[7] DRIFT MOBILITIES IN SEMICONDUCTORS .1. GERMANIUM [J]. PHYSICAL REVIEW, 1953, 92 (03): : 681 - 687

[8] ROSENBAUM SD, JUNCTION DEPTH MEASU

[9] SUBASHIEV VK, 1961, SOV PHYS-SOL STATE, V2, P2406

[10] SUGANO T, 1961, P IRE, V49, P1218

[1] BOOTHROYD AR, 1961, 60 U CAL REP

[2] BOOTHROYD AR, 1963, IEEE T ELECTRON DEV, V10, P140

[3] DAS MB, 1961, IRE T ELECTRON DEV, VED8, P15

[4] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553

[5] POTENTIAL DISTRIBUTION AND CAPACITANCE OF A GRADED P-N JUNCTION [J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (06): : 1573 - 1602

[6] DRIFT MOBILITIES IN SEMICONDUCTORS .2. SILICON [J]. PHYSICAL REVIEW, 1954, 93 (06): : 1204 - 1206

[7] DRIFT MOBILITIES IN SEMICONDUCTORS .1. GERMANIUM [J]. PHYSICAL REVIEW, 1953, 92 (03): : 681 - 687

[8] ROSENBAUM SD, JUNCTION DEPTH MEASU

[9] SUBASHIEV VK, 1961, SOV PHYS-SOL STATE, V2, P2406

[10] SUGANO T, 1961, P IRE, V49, P1218