THRESHOLD AND MEMORY SWITCHING IN CRYSTALLINE CHALCOGENIDE MATERIALS

被引：60

作者：

PLATAKIS, NS

GATOS, HC

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1972年 / 13卷 / 01期

关键词：

D O I：

10.1002/pssa.2210130136

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K1 / &

共 12 条

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[2]

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[4]

Gildart L., 1970, Journal of Non-Crystalline Solids, V2, P240, DOI 10.1016/0022-3093(70)90142-0

[5]

Henisch H. K., 1970, Journal of Non-Crystalline Solids, V4, P538, DOI 10.1016/0022-3093(70)90091-8

[6] NEGATIVE RESISTANCE AND SWITCHING EFFECT IN SINGLE CRYSTAL LAYER COMPOUNDS SNS2 AND ZRS2 [J].

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SAID, G ;

DAVIS, R .

SOLID STATE COMMUNICATIONS, 1969, 7 (18) :1359-&

[7] REVERSIBLE STRUCTURAL TRANSFORMATIONS IN AMORPHOUS SEMICONDUCTORS FOR MEMORY AND LOGIC [J].

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[8] REVERSIBLE ELECTRICAL SWITCHING PHENOMENA IN DISORDERED STRUCTURES [J].

OVSHINSKY, SR .

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[9] PREPARATION OF VITREOUS MATERIALS IN FORM OF WELL-DEFINED HOLLOW CYLINDERS [J].

PLATAKIS, NS ;

GATOS, HC ;

WITT, AF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (04) :510-&

[10] CHALCOGENIDE SEMICONDUCTOR SYSTEM - AS2SE3-SB2SE3 [J].

PLATAKIS, NS ;

SADAGOPAN, V ;

GATOS, HC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (10) :1436-+

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