MISFIT DISLOCATIONS LYING ALONG (100) IN [001] GAAS/IN0.25GA0.75AS/GAAS QUANTUM-WELL HETEROSTRUCTURES

被引：10

作者：

ZOU, J ^{[1
]}

CHOU, TC ^{[1
]}

COCKAYNE, DJH ^{[1
]}

SIKORSKI, A ^{[1
]}

VAUGHAN, MR ^{[1
]}

机构：

[1] CSIRO,DIV RADIOPHYS,EPPING,NSW 2121,AUSTRALIA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 13期

关键词：

D O I：

10.1063/1.112938

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Misfit dislocations in [001] GaAs/In0.25Ga0.75As/GaAs multiquantum well heterostructures are studied by transmission electron microscopy. Two sets of misfit dislocation networks have been observed; one is a set of conventional 60 degrees misfit dislocations lying along <110>, and the other is a set of edge dislocations lying along <100>. The location of these misfit dislocations with respect to the strained layers is investigated. A qualitative explanation for the generation mechanism of the misfit dislocations lying along <100> is given.

引用

页码：1647 / 1649

页数：3

共 12 条

[1] REFRACTIVE-INDEXES OF III-V COMPOUNDS - KEY PROPERTIES OF INGAASP RELEVANT TO DEVICE DESIGN
ADACHI, S
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) : 5863 - 5869
[2] DISLOCATION GLIDE IN (110) PLANES IN SEMICONDUCTORS WITH DIAMOND OR ZINCBLENDE STRUCTURE
ALBRECHT, M
STRUNK, HP
HULL, R
BONAR, JM
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (18) : 2206 - 2208
[3] OBSERVATIONS OF NEW MISFIT DISLOCATION CONFIGURATIONS AND SLIP SYSTEMS AT ULTRAHIGH STRESSES IN THE (AL)GAAS/INXGA1-XAS/GAAS(100) SYSTEM
BONAR, JM
HULL, R
WALKER, JF
MALIK, R
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (11) : 1327 - 1329
[4] A MULTIPLE CROSS-SLIP MECHANISM FOR THE GENERATION OF MISFIT DISLOCATIONS IN (001) SEMICONDUCTOR HETEROSTRUCTURES
CHERNS, D
CHOU, CT
STEEDS, JW
ASHENFORD, DA
LUNN, B
[J]. PHILOSOPHICAL MAGAZINE LETTERS, 1993, 67 (05) : 323 - 330
[5] STRESS DEPENDENCE OF DISLOCATION GLIDE ACTIVATION-ENERGY IN SINGLE-CRYSTAL SILICON-GERMANIUM ALLOYS UP TO 2.6 GPA
DODSON, BW
TSAO, JY
[J]. PHYSICAL REVIEW B, 1988, 38 (17): : 12383 - 12387
[6] ONE-DIMENSIONAL DISLOCATIONS .1. STATIC THEORY
FRANK, FC
VANDERMERWE, JH
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053): : 205 - 216
[7] JIANG S, COMMUNICATION
[8] KIGHTLEY P, 1991, I PHYS C, V117, P603
[9] CRITICAL STRESSES FOR SIXGE1-X STRAINED-LAYER PLASTICITY
TSAO, JY
DODSON, BW
PICRAUX, ST
CORNELISON, DM
[J]. PHYSICAL REVIEW LETTERS, 1987, 59 (21) : 2455 - 2458
[10] MISFIT DISLOCATIONS AND CRITICAL THICKNESS IN INGAAS/GAAS HETEROSTRUCTURE SYSTEMS
ZOU, J
COCKAYNE, DJH
USHER, BF
[J]. JOURNAL OF APPLIED PHYSICS, 1993, 73 (02) : 619 - 626

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