MISFIT DISLOCATIONS LYING ALONG (100) IN [001] GAAS/IN0.25GA0.75AS/GAAS QUANTUM-WELL HETEROSTRUCTURES

被引：10

作者：

ZOU, J ^{[1
]}

CHOU, TC ^{[1
]}

COCKAYNE, DJH ^{[1
]}

SIKORSKI, A ^{[1
]}

VAUGHAN, MR ^{[1
]}

机构：

[1] CSIRO,DIV RADIOPHYS,EPPING,NSW 2121,AUSTRALIA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 13期

关键词：

D O I：

10.1063/1.112938

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Misfit dislocations in [001] GaAs/In0.25Ga0.75As/GaAs multiquantum well heterostructures are studied by transmission electron microscopy. Two sets of misfit dislocation networks have been observed; one is a set of conventional 60 degrees misfit dislocations lying along <110>, and the other is a set of edge dislocations lying along <100>. The location of these misfit dislocations with respect to the strained layers is investigated. A qualitative explanation for the generation mechanism of the misfit dislocations lying along <100> is given.

引用

页码：1647 / 1649

页数：3