DEEP-LEVEL-NOISE SPECTROSCOPY OF ION-IMPLANTED POLYSILICON THIN-FILMS

被引：7

作者：

MADENACH, AJ

WERNER, J

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.38.1958

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1958 / 1962

页数：5

共 20 条

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[9] NON-LORENTZIAN NOISE AT SEMICONDUCTOR INTERFACES [J].

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[10]

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