1/F NOISE IN POLYCRYSTALLINE SILICON RESISTORS

被引：39

作者：

DEGRAAFF, HC

HUYBERS, MTM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 05期

关键词：

D O I：

10.1063/1.332369

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2504 / 2507

页数：4

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