60-GHZ POWER PERFORMANCE OF ION-IMPLANTED INXGA(1-X) AS/GAAS MESFETS

被引：3

作者：

FENG, M ^{[1
]}

LAU, CL ^{[1
]}

LEPKOWSKI, TR ^{[1
]}

BRUSENBACK, P ^{[1
]}

SCHELLENBERG, JM ^{[1
]}

机构：

[1] SCHELLENBERG ASSOCIATES,HUNTINGTON BEACH,CA 92647

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 11期

关键词：

D O I：

10.1109/55.63031

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents state-of-the-art 60-GHz power performance achieved by ion-implanted InGaAs/GaAs MESFET’s for a 0.25 X 200-µm gate length device. At output power of 100 mW, a power-added efficiency of 15% and associated gain of 4.2 dB were obtained and a saturated output power of 121 mW was achieved for the same device. These results are comparable to the best reported millimeter-wave power performance of InGaAs/GaAs pseudomorphic HEMT’s. © 1990 IEEE

引用

页码：496 / 498

页数：3

共 10 条

[1]

FENG M, 1984, APPL PHYS LETT, V44, P231, DOI 10.1063/1.94681

[2]

FENG M, 1990, UNPUB IEEE T MICROWA

[3]

FENG M, 1990, UNPUB IEEE ELECTRON

[4]

FENG M, 1988, 1KTH P INT S GALL AR, P186