HALF-MICROMETER GATE-LENGTH ION-IMPLANTED GAAS-MESFET WITH 0.8-DB NOISE-FIGURE AT 16 GHZ

被引：17

作者：

LAU, CL

FENG, M

LEPKOWSKI, TR

WANG, GW

CHANG, Y

ITO, C

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 09期

关键词：

D O I：

10.1109/55.34725

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：409 / 411

页数：3

共 13 条

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