LOW-NOISE HEMT USING MOCVD

被引：8

作者：

TANAKA, K

OGAWA, M

TOGASHI, K

TAKAKUWA, H

OHKE, H

KANAZAWA, M

KATO, Y

WATANABE, S

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 12期

关键词：

D O I：

10.1109/T-ED.1986.22867

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2053 / 2058

页数：6

共 8 条

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[2]

JOSHIN K, 1984, 16TH C SOL STAT DEV, P347

[3]

KAMEI K, 1984, GAAS RELATED COMPOUN, P545

[4] ULTRA LOW-NOISE AND HIGH-FREQUENCY OPERATION OF TEGFETS MADE BY MBE [J].

LAVIRON, M ;

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JAY, PR ;

DELESCLUSE, P ;

CHEVRIER, J ;

LINH, NT .

PHYSICA B & C, 1985, 129 (1-3) :376-379

[5] MICROWAVE PERFORMANCE OF 0.25-MU-M GATE LENGTH HIGH ELECTRON-MOBILITY TRANSISTORS [J].

MISHRA, UK ;

PALMATEER, SC ;

CHAO, PC ;

SMITH, PM ;

HWANG, JCM .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (03) :142-145

[6]

SHIBATA K, 1985, JUN IEEE MTT S, P547

[7]

SHOLLEY M, 1985, JUN IEEE MTT S, P5455

[8] A LOW-NOISE MICROWAVE HEMT USING MOCVD [J].

TAKAKUWA, H ;

TANAKA, K ;

MORI, Y ;

ARAI, M ;

KATO, Y ;

WATANABE, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) :595-600

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