ULTRA LOW-NOISE AND HIGH-FREQUENCY OPERATION OF TEGFETS MADE BY MBE

[1] CHYE PW, 1982, IEEE ELECT DEV LETT, V3, P491

[2] FENG M, 1984, APPL PHYS LETT, V44, P231, DOI 10.1063/1.94681

[3] FUKUI H, 1979, IEEE T ELECT DEVICES, V26

[4] Ishiuchi H., 1982, International Electron Devices Meeting. Technical Digest, P590

[5] KAMI K, 1980, IEDM, P102

[6] LOW-NOISE NORMALLY ON AND NORMALLY OFF TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 530 - 532

[7] HIGH-SPEED LOW-POWER DCFL USING PLANAR TWO-DIMENSIONAL ELECTRON-GAS FET TECHNOLOGY [J]. ELECTRONICS LETTERS, 1982, 18 (12) : 517 - 518

[1] CHYE PW, 1982, IEEE ELECT DEV LETT, V3, P491

[2] FENG M, 1984, APPL PHYS LETT, V44, P231, DOI 10.1063/1.94681

[3] FUKUI H, 1979, IEEE T ELECT DEVICES, V26

[4] Ishiuchi H., 1982, International Electron Devices Meeting. Technical Digest, P590

[5] KAMI K, 1980, IEDM, P102

[6] LOW-NOISE NORMALLY ON AND NORMALLY OFF TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 530 - 532

[7] HIGH-SPEED LOW-POWER DCFL USING PLANAR TWO-DIMENSIONAL ELECTRON-GAS FET TECHNOLOGY [J]. ELECTRONICS LETTERS, 1982, 18 (12) : 517 - 518