HIGH-PERFORMANCE KA-BAND AND V-BAND HEMT LOW-NOISE AMPLIFIERS

被引：4

作者：

DUH, KHG

CHAO, PC

SMITH, PM

LESTER, LF

LEE, BR

BALLINGALL, JM

KAO, MY

机构：

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1988年 / 36卷 / 12期

关键词：

D O I：

10.1109/22.17390

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1598 / 1603

页数：6

共 18 条

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NAKANO, K ;

HSU, TI ;

GOEL, J .

ELECTRONICS LETTERS, 1985, 21 (22) :1028-1029

[2] ELECTRON-BEAM FABRICATION OF GAAS LOW-NOISE MESFETS USING A NEW TRILAYER RESIST TECHNIQUE [J].

CHAO, PC ;

SMITH, PM ;

PALMATEER, SC ;

HWANG, JCM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) :1042-1046

[3]

CHAO PC, 1987 IEDM

[4] ULTRA-LOW-NOISE CRYOGENIC HIGH-ELECTRON-MOBILITY TRANSISTORS [J].

DUH, KHG ;

POSPIESZALSKI, MW ;

KOPP, WF ;

HO, P ;

JABRA, AA ;

CHAO, PC ;

SMITH, PM ;

LESTER, LF ;

BALLINGALL, JM ;

WEINREB, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (03) :249-256

[5] 60 GHZ LOW-NOISE HIGH-ELECTRON-MOBILITY TRANSISTORS [J].

DUH, KHG ;

CHAO, PC ;

SMITH, PM ;

LESTER, LF ;

LEE, BR .

ELECTRONICS LETTERS, 1986, 22 (12) :647-649

[6]

DUH KHG, UNPUB IEEE T ELECTRO

[7]

DUH KHG, UNPUB IEEE ELECTRON

[8]

LIU SM, 1987 IEDM

[9]

MCCOLL M, 1983 P IEEE NAT TEL, P39

[10] A FUNCTIONAL GAAS-FET NOISE MODEL [J].

PODELL, AF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (05) :511-517

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