A FUNCTIONAL GAAS-FET NOISE MODEL

被引：32

作者：

PODELL, AF

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 05期

关键词：

D O I：

10.1109/T-ED.1981.20375

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：511 / 517

页数：7

共 23 条

[1] EFFECT OF SOURCE LEAD INDUCTANCE ON NOISE FIGURE OF A GAAS FET [J].

ANASTASS.A ;

STRUTT, MJO .

PROCEEDINGS OF THE IEEE, 1974, 62 (03) :406-408

[2] NOISE BEHAVIOR OF SCHOTTKY BARRIER GATE FIELD-EFFECT TRANSISTORS AT MICROWAVE FREQUENCIES [J].

BAECHTOLD, W .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (02) :97-+

[3] SI AND GAAS 0.5 MUM-GATE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J].

BAECHTOLD, W ;

DAETWYLE.K ;

FORSTER, T ;

MOHR, TO ;

WALTER, W ;

WOLF, P .

ELECTRONICS LETTERS, 1973, 9 (10) :232-234

[4] THERMAL NOISE IN JUNCTION-GATE FIELD-EFFECT TRANSISTORS [J].

BRUNCKE, WC ;

VANDERZI.A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (03) :323-+

[5] SUBSTRATE CURRENT IN GAAS-MESFETS [J].

EASTMAN, LF ;

SHUR, MS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (09) :1359-1361

[6]

ENGBERG J, 1974 P EUR MICR C, P385

[7]

ENGELMANN RWH, 1976, DEC IEDM, P351

[8] EFFECTS OF INTERVALLEY SCATTERING ON NOISE IN GAAS AND INP FIELD-EFFECT TRANSISTORS [J].

FREY, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (12) :1298-1303

[9] OPTIMAL NOISE-FIGURE OF MICROWAVE GAAS-MESFETS [J].

FUKUI, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) :1032-1037

[10] DESIGN OF MICROWAVE GAAS-MESFETS FOR BROAD-BAND LOW-NOISE AMPLIFIERS [J].

FUKUI, H .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (07) :643-650

← 1 2 3 →