KINETIC INSTABILITY IN THE GROWTH OF CAF2 ON SI(111)

被引：39

作者：

TROMP, RM

REUTER, MC

机构：

[1] IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 73卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.73.110

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Even when thermodynamic driving forces favor a thin film to grow with a particular growth mode, this preferred growth mode may be kinetically inaccessible. While this is not uncommon at low temperature (short diffusion length), we show that in the Si(111)/CaF2 system, during the early stage of growth, the preferred growth mode may be inacessible at temperatures as high as 660-degrees-C, where the surface diffusion length (several microns) exceeds the terrace spacing. Once the preferred growth mode is initiated the surface morphology becomes unstable, leading to a fast and striking change in layer occupancies.

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页码：110 / 113

页数：4

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