VARIABLE GROWTH MODES OF CAF2 ON SI(111) DETERMINED BY X-RAY PHOTOELECTRON DIFFRACTION

被引：31

作者：

DENLINGER, JD

ROTENBERG, E

HESSINGER, U

LESKOVAR, M

OLMSTEAD, MA

机构：

[1] LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720

[2] UNIV WASHINGTON,DEPT PHYS FM15,SEATTLE,WA 98195

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 17期

关键词：

D O I：

10.1063/1.109478

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Chemical discrimination of bulk and interface Ca 2p x-ray photoelectron diffraction modulations is used to identify three growth regimes during the initial stages of CaF2 epitaxy on Si(111). Low flux, high temperature conditions produce island growth atop a nonwetting, chemically reacted Ca-F interface layer. Changing the growth kinetics by increasing the flux produces more laminar growth. Lowering the substrate temperature produces a more stoichiometric CaF2 interface layer that results in immediate wetting and laminar growth.

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页码：2057 / 2059

页数：3

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