ELECTRICAL-PROPERTIES OF LOW-TEMPERATURE-GROWN CAF2 ON SI(111)

While epitaxial CaF2 films grown on Si(111) at temperatures above 550-degrees-C exhibited flat capacitance-voltage (C-V) curves, suggesting a pinned CaF2/Si(111) interface, we have observed unpinned C-V curves from as-deposited epitaxial CaF2 grown at 300-degrees-C. Our results demonstrate that C-V characteristics of CaF2/Si(111) are determined by the thermal history, rather than the crystalline quanlity, of the CaF2 film. Correlations among CaF2/Si interface state density, thermal stress, and atomic bonding at the interface are discussed.