HOT-ELECTRON HARDENED SI-GATE MOSFET UTILIZING F-IMPLANTATION

被引：94

作者：

NISHIOKA, Y

OHYU, K

OHJI, Y

NATUAKI, N

MUKAI, K

MA, TP

机构：

[1] YALE UNIV,CTR MICROELECTR MAT & STRUCT,NEW HAVEN,CT 06520

[2] YALE UNIV,DEPT PLANT DIS,NEW HAVEN,CT 06520

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 04期

关键词：

D O I：

10.1109/55.31697

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：141 / 143

页数：3

相关论文

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