RADIATION AND HOT-ELECTRON EFFECTS ON SIO2/SI INTERFACES WITH OXIDES GROWN IN O-2 CONTAINING SMALL AMOUNTS OF TRICHLOROETHANE

被引：33

作者：

WANG, Y ^{[1
]}

NISHIOKA, Y ^{[1
]}

MA, TP ^{[1
]}

BARKER, RC ^{[1
]}

机构：

[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 07期

关键词：

D O I：

10.1063/1.99397

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：573 / 575

页数：3

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