HOT-ELECTRON INDUCED INTERFACE TRAPS IN METAL/SIO2/SI CAPACITORS - THE EFFECT OF GATE-INDUCED STRAIN

被引：39

作者：

HOOK, TB

MA, TP

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 18期

关键词：

D O I：

10.1063/1.96983

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1208 / 1210

页数：3

共 16 条

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