COMPARATIVE STUDIES OF TUNNEL INJECTION AND IRRADIATION ON METAL-OXIDE SEMICONDUCTOR STRUCTURES

被引：39

作者：

KNOLL, M

BRAUNIG, D

FAHRNER, WR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 10期

关键词：

D O I：

10.1063/1.330038

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6946 / 6952

页数：7

共 17 条

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