PERIMETER-RELATED CURRENT IN HIGH-FIELD TUNNELING INTO SIO2

被引：5

作者：

HOOK, TB

MA, TP

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 04期

关键词：

D O I：

10.1063/1.96131

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：417 / 419

页数：3

共 9 条

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[7]

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[8] ON TUNNELING IN METAL-OXIDE-SILICON STRUCTURES [J].

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[9] TUNNELING OF ELECTRONS FROM SI INTO THERMALLY GROWN SIO2 [J].

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