HIGH-FIELD PHENOMENA IN THERMAL SIO2

High field phenomena in thermally grown SiO//2 have been investigated by a combination of current-voltage characterization, CV measurements, and forced-current voltage-time characteristics. Four oxide thicknesses were studied: 160, 345, 352, and 1452A. All structures were nonrecessed Al/SiO//2/Si capacitors of various areas. The substrate was n-type silicon. Interface trap formation and changing with electrons near the cathode during injection from Si was observed for all oxides. Creation of immobile holes in the oxide valence band by impact ionization was observed for the thicker oxides, but not the thinnest. Bulk trapping was significant when electrons were injected from Al into the thicker oxides. The Al/SiO//2 interface was considerably leakier in thicker oxides than predicted by the Fowler-Nordheim theory.