THE EFFECT OF FOWLER-NORDHEIM TUNNELING CURRENT ON THIN SIO2 METAL-OXIDE-SEMICONDUCTOR CAPACITORS

被引：13

作者：

HOSOI, T

AKIZAWA, M

MATSUMOTO, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 06期

关键词：

D O I：

10.1063/1.334399

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2072 / 2076

页数：5

共 20 条

[1]

Chang C., 1983, International Electron Devices Meeting 1983. Technical Digest, P194

[2] LOCATION OF POSITIVE CHARGES IN SIO2-FILMS ON SI GENERATED BY VUV PHOTONS, X-RAYS, AND HIGH-FIELD STRESSING [J].

DIMARIA, DJ ;

WEINBERG, ZA ;

AITKEN, JM .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :898-906

[3] DIELECTRIC INSTABILITY AND BREAKDOWN IN SIO2 THIN-FILMS [J].

DISTEFANO, TH ;

SHATZKES, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :50-54

[4] POSITIVE AND NEGATIVE CHARGING OF THERMALLY GROWN SIO2 INDUCED BY FOWLER-NORDHEIM EMISSION [J].

ITSUMI, M .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3491-3497

[5]

Jeng C. S., 1981, International Electron Devices Meeting, P388

[6] CURRENT RUNAWAY IN INSULATORS AFFECTED BY IMPACT IONIZATION AND RECOMBINATION [J].

KLEIN, N ;

SOLOMON, P .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (10) :4364-4372

[7] COMPARATIVE STUDIES OF TUNNEL INJECTION AND IRRADIATION ON METAL-OXIDE SEMICONDUCTOR STRUCTURES [J].

KNOLL, M ;

BRAUNIG, D ;

FAHRNER, WR .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6946-6952

[8] EFFECTS OF AVALANCHE INJECTION OF ELECTRONS INTO SILICON DIOXIDE - GENERATION OF FAST AND SLOW INTERFACE STATES [J].

LAI, SK ;

YOUNG, DR .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) :6231-6240

[9]

Liang M., 1981, INT EL DEV M INT EL DEV M, P396

[10]

MILINES AG, 1973, DEEP IMPURITIES SEMI, pCH5

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