INTERFACE RELATED EMISSION FROM AN MBE-GROWN (AL,GA)AS HETEROSTRUCTURE

被引：1

作者：

MOLENKAMP, LW ^{[1
]}

THOOFT, GW ^{[1
]}

VANDERPOEL, WAJA ^{[1
]}

FOXON, CT ^{[1
]}

机构：

[1] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND

来源：

JOURNAL DE PHYSIQUE | 1987年 / 48卷 / C-5期

关键词：

D O I：

10.1051/jphyscol:1987523

中图分类号：

学科分类号：

摘要：

引用

页码：127 / 130

页数：4

共 11 条

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[9] NEAR-BAND-GAP LUMINESCENCE FROM A GAAS-ALGAAS INTERFACE [J].

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