COMMENT ON THE TIME-RESOLVED PHOTOLUMINESCENCE STUDY OF MBE-GROWTH-INDUCED DEFECT LINES

被引：11

作者：

EAVES, L ^{[1
]}

SKOLNICK, MS ^{[1
]}

HALLIDAY, DP ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1986年 / 19卷 / 20期

关键词：

D O I：

10.1088/0022-3719/19/20/005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L445 / L446

页数：2

共 6 条

[1] A MODEL FOR SOME DEFECT-RELATED BOUND EXCITON LINES IN THE PHOTOLUMINESCENCE SPECTRUM OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
EAVES, L
HALLIDAY, DP
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (27): : L705 - L709
[2] HALLIDAY DP, 1984, 13TH P INT C DEF SEM, P1005
[3] KUNZEL H, 1980, APPL PHYS LETT, V37, P416, DOI 10.1063/1.91927
[4] STRONGLY POLARIZED BOUND EXCITON LUMINESCENCE FROM GAAS GROWN BY MOLECULAR-BEAM EPITAXY
SKOLNICK, MS
HARRIS, TD
TU, CW
BRENNAN, TM
STURGE, MD
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (04) : 427 - 429
[5] SKOLNICK MS, 1986, PHYS REV B
[6] TIME-RESOLVED PHOTOLUMINESCENCE STUDY OF MOLECULAR-BEAM EPITAXIAL-GROWTH INDUCED DEFECT LINES IN GAAS
STEINER, T
THEWALT, MLW
KOTELES, ES
SALERNO, JP
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 257 - 259