HIGH-RESOLUTION SPECTROSCOPY OF DEFECT-BOUND EXCITONS AND ACCEPTORS IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：33

作者：

SKOLNICK, MS ^{[1
]}

TU, CW ^{[1
]}

HARRIS, TD ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.33.8468

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8468 / 8474

页数：7

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