SPECTRAL MODULATION OF LUMINESCENCE OF STRAINED SI1-XGEX/SI QUANTUM-WELLS IN A VERTICAL-CAVITY WITH AIR/SI AND SI/SIO2 INTERFACE MIRRORS

被引：13

作者：

FUKATSU, S ^{[1
]}

NAYAK, DK ^{[1
]}

SHIRAKI, Y ^{[1
]}

机构：

[1] UNIV TOKYO,ADV SCI & TECHNOL RES CTR,MEGURO KU,TOKYO 153,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 24期

关键词：

D O I：

10.1063/1.112497

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Integration of strained Si1-xGex/Si quantum wells (QWs) in a vertical cavity is demonstrated on a Si substrate with a buried-oxide using gas source Si molecular beam epitaxy. Spontaneous emission from the SiGe QW is found to be spectrally coupled to the longitudinal modes of a vertical cavity with buried oxide/Si and top Si/air interface mirrors, which is in excellent agreement with separate reflectance measurements. In addition, clear oscillations were observed in photoluminescence excitation spectra for photon energies even above the Si band gap, demonstrating cavity modulation of the incident light absorption. © 1994 American Institute of Physics.

引用

页码：3039 / 3041

页数：3

共 12 条

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