ROOM-TEMPERATURE PHOTOLUMINESCENCE IN STRAINED SI1-XGEX/SI QUANTUM-WELLS

被引：15

作者：

FUKATSU, S

SUNAMURA, H

SHIRAKI, Y

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期

关键词：

D O I：

10.1116/1.587073

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoluminescence (PL) observation at room temperature is reported in strained Si1-xGex/Si multiple quantum wells (MQWs) grown by gas source Si molecular beam epitaxy. It was found that QW PL is enhanced when MQWs are arranged so that photogenerated carriers are trapped efficiently to QWs without significant loss. This was achieved by locating MQWs over the penetration depth of the excitation light. QW PL was found to develop with a power exponent of 1.8 for lower excitation. QW PL was observed at room temperature for MQW samples with x up to 0.69.

引用

页码：1160 / 1162

页数：3

共 18 条

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