SITE SYMMETRY OF THE EL2 CENTER IN GAAS

被引：40

作者：

LEVINSON, M

KAFALAS, JA

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.35.9383

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9383 / 9386

页数：4

共 29 条

[1]

BACHELET GB, 1985, 17TH P INT C PHYS SE, P755

[2] ELECTRONIC-STRUCTURE AND BINDING-ENERGY OF THE ASGA-ASI PAIR IN GAAS - EL2 AND THE MOBILITY OF INTERSTITIAL ARSENIC [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1987, 35 (12) :6154-6164

[3] BISTABILITY AND METASTABILITY OF THE GALLIUM VACANCY IN GAAS - THE ACTUATOR OF EL2 [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW LETTERS, 1985, 55 (21) :2340-2343

[4]

Baranowski J. M., 1985, Thirteenth International Conference on Defects in Semiconductors, P199

[5]

DEIRI M, 1984, J PHYS C SOLID STATE, V17, pL627, DOI 10.1088/0022-3719/17/23/007

[6]

Goltzene A., 1985, Thirteenth International Conference on Defects in Semiconductors, P937

[7] OPTICALLY DETECTED ELECTRON-NUCLEAR DOUBLE-RESONANCE OF AS-ANTISITE DEFECTS IN GAAS [J].

HOFMANN, DM ;

MEYER, BK ;

LOHSE, F ;

SPAETH, JM .

PHYSICAL REVIEW LETTERS, 1984, 53 (12) :1187-1190

[8] IDENTIFICATION OF THE 0.82-EV ELECTRON TRAP, EL2 IN GAAS, AS AN ISOLATED ANTISITE ARSENIC DEFECT [J].

KAMINSKA, M ;

SKOWRONSKI, M ;

KUSZKO, W .

PHYSICAL REVIEW LETTERS, 1985, 55 (20) :2204-2207

[9] INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS [J].

KAMINSKA, M ;

SKOWRONSKI, M ;

LAGOWSKI, J ;

PARSEY, JM ;

GATOS, HC .

APPLIED PHYSICS LETTERS, 1983, 43 (03) :302-304

[10]

KAPLYANSKII AA, 1964, OPT SPEKTROSK, V16, P329

← 1 2 3 →