THE FREQUENCY-RESPONSE OF AN INHOMOGENEOUS AMORPHOUS-SEMICONDUCTOR

[1] ABKOWITZ M, 1976, COMMUN PHYS, V1, P175

[2] CAPACITANCE STUDIES ON AMORPHOUS-SILICON SCHOTTKY-BARRIER DIODES [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 587 - 592

[3] Calculation of various physics constants in heterogenous substances I Dielectricity constants and conductivity of mixed bodies from isotropic substances [J]. ANNALEN DER PHYSIK, 1935, 24 (07) : 636 - 664

[4] DYRE J, 1985, J PHYS-PARIS, V46, P3643

[5] STUDIES OF THE FREQUENCY-DEPENDENT ADMITTANCES OF SCHOTTKY BARRIERS FORMED ON SPUTTERED HYDROGENATED AMORPHOUS-SILICON [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 49 (06): : 565 - 595

[6] HOPPING THEORY OF BAND-TAIL RELAXATION IN DISORDERED SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1985, 32 (12): : 8191 - 8196

[7] Isard JO., 1962, P IEE B, V109, P440, DOI [10.1049/pi-b-2.1962.0077, DOI 10.1049/PI-B-2.1962.0077]

[8] DISPERSIVE TRANSPORT AND TRAP SATURATION IN DOPED HYDROGENATED AMORPHOUS-SILICON [J]. SOLID STATE COMMUNICATIONS, 1984, 50 (09) : 845 - 848

[9] LANDAUER R, 1977, ELECTRICAL TRANSPORT, P2

[10] FREQUENCY-DEPENDENT LOSS IN AMORPHOUS-SEMICONDUCTORS [J]. ADVANCES IN PHYSICS, 1982, 31 (05) : 553 - 637

[1] ABKOWITZ M, 1976, COMMUN PHYS, V1, P175

[2] CAPACITANCE STUDIES ON AMORPHOUS-SILICON SCHOTTKY-BARRIER DIODES [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 587 - 592

[3] Calculation of various physics constants in heterogenous substances I Dielectricity constants and conductivity of mixed bodies from isotropic substances [J]. ANNALEN DER PHYSIK, 1935, 24 (07) : 636 - 664

[4] DYRE J, 1985, J PHYS-PARIS, V46, P3643

[5] STUDIES OF THE FREQUENCY-DEPENDENT ADMITTANCES OF SCHOTTKY BARRIERS FORMED ON SPUTTERED HYDROGENATED AMORPHOUS-SILICON [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 49 (06): : 565 - 595

[6] HOPPING THEORY OF BAND-TAIL RELAXATION IN DISORDERED SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1985, 32 (12): : 8191 - 8196

[7] Isard JO., 1962, P IEE B, V109, P440, DOI [10.1049/pi-b-2.1962.0077, DOI 10.1049/PI-B-2.1962.0077]

[8] DISPERSIVE TRANSPORT AND TRAP SATURATION IN DOPED HYDROGENATED AMORPHOUS-SILICON [J]. SOLID STATE COMMUNICATIONS, 1984, 50 (09) : 845 - 848

[9] LANDAUER R, 1977, ELECTRICAL TRANSPORT, P2

[10] FREQUENCY-DEPENDENT LOSS IN AMORPHOUS-SEMICONDUCTORS [J]. ADVANCES IN PHYSICS, 1982, 31 (05) : 553 - 637