STUDIES ON AN IN0.53GA0.47AS/IN0.52AL0.48AS SINGLE-QUANTUM-WELL QUASI-MISFET

被引：11

作者：

SEO, KS ^{[1
]}

BHATTACHARYA, PK ^{[1
]}

机构：

[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,SOLID STATE ELECTR LAB,ANN ARBOR,MI 48109

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 11期

关键词：

D O I：

10.1109/T-ED.1987.23224

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2221 / 2231

页数：11

共 31 条

[1] HIGH-FIELD TRANSPORT IN ORGANOMETALLIC VPE ALXGA1-XAS TRANSFERRED-ELECTRON DEVICES [J].

BANERJEE, P ;

BHATTACHARYA, PK ;

LUDOWISE, MJ ;

DIETZE, WT .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (08) :283-285

[2] MEASUREMENT OF THE GAMMA-L SEPARATION IN GA-0.47IN-0.53 AS BY ULTRAVIOLET PHOTOEMISSION [J].

CHENG, KY ;

CHO, AY ;

CHRISTMAN, SB ;

PEARSALL, TP ;

ROWE, JE .

APPLIED PHYSICS LETTERS, 1982, 40 (05) :423-425

[3] CONTACT RESISTIVITY OF IR LAMP ALLOYED AU-GE METALLIZATION ON GAAS [J].

GILL, SS ;

DAWSEY, JR ;

CULLIS, AG .

ELECTRONICS LETTERS, 1984, 20 (22) :944-945

[4] HIGH CONDUCTANCE AND LOW PERSISTENT PHOTOCONDUCTIVITY IN GA0.47IN0.53AS/AL0.48IN0.52AS MODULATION-DOPED STRUCTURES WITH PINCHOFF CAPABILITIES [J].

GRIEM, T ;

NATHAN, M ;

WICKS, GW ;

HUANG, J ;

CAPANI, PM ;

EASTMAN, LF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :655-656

[5] EXPLICIT LOCAL EXCHANGE-CORRELATION POTENTIALS [J].

HEDIN, L ;

LUNDQVIS.BI .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (14) :2064-&

[6] ELECTRON INTERFERENCE EFFECTS IN QUANTUM-WELLS - OBSERVATION OF BOUND AND RESONANT STATES [J].

HEIBLUM, M ;

FISCHETTI, MV ;

DUMKE, WP ;

FRANK, DJ ;

ANDERSON, IM ;

KNOEDLER, CM ;

OSTERLING, L .

PHYSICAL REVIEW LETTERS, 1987, 58 (08) :816-819

[7]

HONG WP, 1986, IEEE ELECTR DEVICE L, V7, P480, DOI 10.1109/EDL.1986.26446

[8]

HONG WP, 1987, IEEE T ELECTRON DEV, V34, P1491, DOI 10.1109/T-ED.1987.23110

[9]

HONG WP, 1986, IEEE ELECTR DEVICE L, V7, P320, DOI 10.1109/EDL.1986.26387

[10]

HONG WP, UNPUB J ELECTRON MAT

← 1 2 3 4 →