HIGH-FIELD TRANSPORT IN ORGANOMETALLIC VPE ALXGA1-XAS TRANSFERRED-ELECTRON DEVICES

被引：10

作者：

BANERJEE, P ^{[1
]}

BHATTACHARYA, PK ^{[1
]}

LUDOWISE, MJ ^{[1
]}

DIETZE, WT ^{[1
]}

机构：

[1] VARIAN ASSOCIATES,CORP SOLID STATE LABS,PALO ALTO,CA 94303

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 08期

关键词：

D O I：

10.1109/EDL.1983.25734

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：283 / 285

页数：3

相关论文

共 10 条

[1] GAAS LOWER CONDUCTION-BAND MINIMA - ORDERING AND PROPERTIES
ASPNES, DE
[J]. PHYSICAL REVIEW B, 1976, 14 (12) : 5331 - 5343
[2] NEGATIVE DIFFERENTIAL RESISTANCE THROUGH REAL-SPACE ELECTRON-TRANSFER
HESS, K
MORKOC, H
SHICHIJO, H
STREETMAN, BG
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (06) : 469 - 471
[3] HALL-EFFECT AND MOBILITY IN HETEROJUNCTION LAYERS
KEEVER, M
DRUMMOND, TJ
MORKOC, H
HESS, K
STREETMAN, BG
LUDOWISE, M
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1034 - 1036
[4] TIME-DEPENDENCE OF CURRENT AT HIGH ELECTRIC-FIELDS IN ALXGA1-XAS-GAAS HETEROJUNCTION LAYERS
KEEVER, M
DRUMMOND, T
HESS, K
MORKOC, H
STREETMAN, BG
[J]. ELECTRONICS LETTERS, 1981, 17 (02) : 93 - 94
[5] TRANSFER DOPING EFFECTS AT THE ORGANO-METALLIC VAPOR-PHASE EPITAXIAL ALXGA1-XAS-SUBSTRATE GAAS INTERFACE
MATSUMOTO, T
BHATTACHARYA, PK
DARMAWAN, J
LUDOWISE, MJ
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1075 - 1077
[6] ELECTRON-MOBILITY IN GA1-XALXAS ALLOYS
SAXENA, AK
[J]. PHYSICAL REVIEW B, 1981, 24 (06): : 3295 - 3302
[7] ELECTRON-MOBILITY IN ALXGA1-XAS
STRINGFELLOW, GB
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4178 - 4183
[8] VELOCITY SATURATION AND CONDUCTION-BAND STRUCTURE OF GA1-XALXAS UNDER PRESSURE
SUGETA, T
MAJERFELD, A
SAXENA, AK
ROBSON, PN
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (12) : 842 - 844
[9] SUGETA T, 1977, 6TH P BIENN CORN C A, P45
[10] DONOR ENERGY-LEVEL FOR SE IN GA1-XALXAS
YANG, JJ
MOUDY, LA
SIMPSON, WI
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (03) : 244 - 246