SELECTIVE GATE RECESS ETCHING OF GAINAS/ALLNAS BASED HEMTS USING A CH4/H-2 PLASMA WITHOUT SUBSEQUENT ANNEALING

被引：5

作者：

THOMAS, KM

PATRICK, W

BACHTOLD, W

机构：

[1] Laboratory for Electromagnetic Fields and Microwave Electronics, The Swiss Federal Institute of Technology Zürich, CH-8082 Zürich

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 15期

关键词：

HIGH ELECTRON MOBILITY TRANSISTORS; REACTIVE ION ETCHING;

D O I：

10.1049/el:19940827

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A methane hydrogen plasma has been used to define gate recesses through a polymer mask selectively on GaInAs/InAlAs based HEMT devices. No subsequent annealing was necessary and the devices exhibited comparable g(m) and i(dss) values with much better uniformity than conventional wet etched devices.

引用

页码：1251 / 1252

页数：2

共 7 条

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