DEPENDENCE OF ELECTRON EFFECTIVE-MASS ON ALLOY COMPOSITION OF INALGAAS LATTICE-MATCHED TO INP STUDIED BY OPTICALLY DETECTED CYCLOTRON-RESONANCE

被引:11
作者
CHEN, YF [1 ]
DAI, YT [1 ]
FAN, JC [1 ]
LEE, TL [1 ]
LIN, HH [1 ]
机构
[1] NATL TAIWAN UNIV,DEPT ELECT ENGN,TAIPEI 10764,TAIWAN
关键词
D O I
10.1063/1.114389
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electron effective mass of InAlGaAs lattice matched to InP has been determined as a function of Al content. The electron effective mass is obtained from far-infrared optically detected cyclotron resonance (ODCR). In ODCR, the carriers are provided by optical pumping, and hence no doping is necessary. Unlike previous reports, we are able to detect the cyclotron resonance signal of a thin intrinsic epilayer at low temperature. Thus corrections of nonparabolicity are not required. In addition, from photoluminescence measurement, we determine the band-gap energy. Both the effective mass and band-gap energy show a nonlinear variation with Al composition. (C) 1995 America Institute of Physics.
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页码:1256 / 1258
页数:3
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