ELECTRICAL BREAKDOWN MECHANISMS IN THIN INSULATORS

被引：35

作者：

KLEIN, N

机构：

来源：

THIN SOLID FILMS | 1978年 / 50卷 / MAY期

关键词：

D O I：

10.1016/0040-6090(78)90108-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：223 / 232

页数：10

共 58 条

[1] BREAKDOWN CONDUCTION IN THIN DIELECTRIC FILMS - BIBLIOGRAPHICAL SURVEY [J].

AGARWAL, VK .

THIN SOLID FILMS, 1974, 24 (01) :55-70

[2] INFLUENCE OF LAW OF ELECTRICAL CONDUCTIVITY ON THERMAL SWITCHING AND BREAKDOWN [J].

ALTCHEH, L ;

KLEIN, N .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (09) :801-811

[3] MONTE-CARLO STUDIES OF HOT-ELECTRON ENERGY-DISTRIBUTIONS IN THIN INSULATING FILMS .1. CONSTANT MEAN FREE PATH AND A ONE-DIMENSIONAL SIMULATION [J].

BAIDYAROY, S ;

LAMPERT, MA ;

ZEE, B ;

MARTINELLI, RU .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) :2103-2112

[4] FILAMENTARY INJECTION IN SEMI-INSULATING SILICON [J].

BARNETT, AM ;

MILNES, AG .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) :4215-&

[5]

BASSLER H, 1969, Z ANGEW PHYSIK, V27, P321

[6] BREAKDOWN CONDUCTION IN AL-SIO-AL CAPACITORS [J].

BUDENSTEIN, PP ;

HAYES, PJ .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) :2837-+

[7] EFFECTS OF MATERIAL AND PROCESSING PARAMETERS ON DIELECTRIC STRENGTH OF THERMALLY GROWN SIO2 FILMS [J].

CHOU, NJ ;

ELDRIDGE, JM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (10) :1287-+

[8] INTERNAL FIELD EMISSION AT NARROW SILICON AND GERMANIUM P-N JUNCTIONS [J].

CHYNOWETH, AG ;

FELDMANN, WL ;

LEE, CA ;

LOGAN, RA ;

PEARSON, GL ;

AIGRAIN, P .

PHYSICAL REVIEW, 1960, 118 (02) :425-434

[9] ELECTRON AVALANCHE IN LIQUID XENON [J].

DERENZO, SE ;

MAST, TS ;

ZAKLAD, H ;

MULLER, RA .

PHYSICAL REVIEW A, 1974, 9 (06) :2582-2591

[10] DIELECTRIC-BREAKDOWN OF ANODIC ALUMINUM-OXIDE [J].

DEWIT, HJ ;

WIJENBERG, C ;

CREVECOEUR, C .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (10) :1479-1486

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