IMPROVED THEORY OF BALLISTIC TRANSPORT IN ONE DIMENSION

被引：8

作者：

HOLDEN, AJ

DEBNEY, BT

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 13期

关键词：

D O I：

10.1049/el:19820378

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：558 / 559

页数：2

共 7 条

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NATHAN, MI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) :941-944

[6] NEAR BALLISTIC ELECTRON-TRANSPORT IN GAAS DEVICES AT 77-DEGREES-K [J].

SHUR, MS ;

EASTMAN, LF .

SOLID-STATE ELECTRONICS, 1981, 24 (01) :11-18

[7] BALLISTIC TRANSPORT IN SEMICONDUCTOR AT LOW-TEMPERATURES FOR LOW-POWER HIGH-SPEED LOGIC [J].

SHUR, MS ;

EASTMAN, LF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) :1677-1683

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