ION IMPLANT GETTERING OF GENERATION IMPURITIES IN SILICON INVESTIGATED USING PIXE AND RUTHERFORD BACKSCATTERING SPECTROMETRY

被引：2

作者：

GOLJA, B ^{[1
]}

NASSIBIAN, AG ^{[1
]}

COHEN, D ^{[1
]}

机构：

[1] AUSTRALIAN INST NUCL SCI & ENGN,SUTHERLAND,NSW 2232,AUSTRALIA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1981年 / 191卷 / 1-3期

关键词：

D O I：

10.1016/0029-554X(81)90984-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：63 / 69

页数：7

共 16 条

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