A DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDY OF HIGH ELECTRON-MOBILITY TRANSISTORS SUBJECTED TO LIFETIME STRESS TESTS

被引：7

作者：

MAGNO, R

SHELBY, R

ANDERSON, WT

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 11期

关键词：

D O I：

10.1063/1.343667

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5613 / 5617

页数：5

共 10 条

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